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Breaking the Bottleneck in High-Frequency RF: The Path to Domestic Substitution for the Zhongwei Puyi BT110A Bias-Tee
Release time:
2026-03-10 13:38
Source:
Zhongwei Puyi
1. Introduction: The Core Pain Points of RF in the Millimeter Wave Era
In test and integration applications such as 1.6T/800G optical modules, VCSEL modulation chips, lasers, SerDes high-speed data interfaces, ultra-wideband power amplifier chips, and active antennas, a device no larger than a matchbox—known as a Bias-Tee (DC biaser)—is emerging as a critical factor influencing system performance. As communication bands rapidly shift toward millimeter wave (30 GHz–300 GHz), traditional Bias-Tees are facing three major, potentially fatal challenges:
(1) High-Frequency Loss: In frequency bands above 40 GHz, signal attenuation increases exponentially.
(2) Power Bottleneck: After the widespread adoption of GaN power amplifiers, the required bias current has surged from the 100 mA range to over 500 mA.
(3) Market Monopoly: For a long time, the high‑frequency Bias-Tee market has been monopolized by companies such as Germany’s SHF and the United States’ Marki/HL, with unit prices exceeding USD 4,000 and lead times as long as six months.
The BT110A launched by Zhongwei Puyue not only pushes the frequency upper limit to 110 GHz, but also achieves domestic substitution with “military-grade reliability plus civilian‑grade costs,” making it a benchmark product that breaks the bottleneck in high‑frequency RF technology.
2. Technological Breakthrough: How the BT110A Overcomes the Limits of Millimeter Waves
1. Materials and Process Innovation
1). The Capacitor Revolution: Compared with traditional capacitors, the ceramic capacitors used in the BT110A offer advantages such as high voltage resistance, high self-resonant frequency, small size, and high reliability, making them an ideal match for the impedance matching and integration requirements of high‑frequency links.
2). Miniaturization of Inductors: Through innovative inductor designs, advanced manufacturing processes, and breakthroughs in materials, we have successfully addressed the challenge of achieving ultra-wideband operation with high Q factors. The inductors now measure less than 0.5 mm × 0.5 mm while maintaining a current-carrying capacity of ≥400 mA (compared to the industry average of 200 mA).
2. Comparison of Measured High-Frequency Performance Data
Data Source: Zhongwei Puyi Laboratory, SHF/HL Official Website
3. Environmental Reliability Design
1). Thermal Management Solution: Utilizing a highly thermally conductive structure and specialized cooling processes, the device achieves a temperature rise below that of competing products at full power (2 W) at 110 GHz, and has passed a 168-hour continuous full‑load test—exceeding the international standard of 72 hours.
2). Vibration and High/Low Temperature Testing: Simulating optical communication test scenarios, performance fluctuations remain below 3% under random vibration between 20–2000 Hz and extreme temperatures ranging from -40°C to 85°C.
3. Market Positioning: The Core Battleground for BT110A
1. High-Speed Optical Communication Scenarios: Breaking the Monopoly on “Communication Devices”
1). Scenario Requirements: In high‑speed data test scenarios with a throughput of ≥112 Gbps, the system must support the highest signal frequency (e.g., 100 G optical modules must support ≥50 GHz); focus on low insertion loss, low VSWR, and minimal crosstalk; and ensure impedance matching at 50 Ω.
2). Measured Data: Across the entire frequency band of the BT110A, the maximum insertion loss is less than 2 dB, with a typical VSWR of 1.35. The overall group delay fluctuates within the range of 40–60 ps, showing no obvious trend of monotonic increase or decrease with frequency.
Note: Measured standing wave ratio plot and measured group delay plot
2. Amplifier Scenario: Stable Operation + Efficient Signal Transmission
1). Performance Challenges: While ensuring that RF signals are transmitted across a wide frequency band without interference, provide a clean DC bias for broadband amplifiers, minimize RF signal reflections, offer optional sense current/voltage monitoring ports, suppress power amplifier oscillations, and address the core requirement of “sharing a common power and signal path.”
IV. The Logic of Domestic Substitution: From… From “usable” to “easy to use” The leap
1. Cost Advantage: Breaking Through the Foreign-Invested Pricing System
Note: Actual prices may fluctuate with market conditions; the 2025 market quotes provided here are for reference only.
2. Supply Chain Security: A Fully Independent and Controllable Production Line
From ceramic substrate lithography to inductor microfabrication, a 100% domestically sourced supply chain has been established, thereby mitigating the risks associated with U.S. EAR export controls.
Breaking Through with Technology: From Catch-Up to Leadership
According to data from Yole Group, the global high‑frequency Bias‑Tee market was approximately USD 120 million in 2023 and is expected to reach USD 450 million by 2028 (CAGR of 30%), with Chinese manufacturers’ market share poised to increase from 15% to 40%.
The breakthrough achieved by Zhongwei Puyee’s BT110A not only benchmarks against international giants in terms of performance parameters, but also signifies that Chinese RF device companies have mastered the core technological capability of integrating “high frequency + high power + high reliability” into a single, unified solution. We are also keeping pace with the market’s demand for 448 Gbps high‑speed interconnects and continuing to advance toward 220 GHz Bias-Tees.
On the eve of the explosive growth of trillion‑dollar markets such as millimeter‑wave communications, satellite internet, and autonomous driving, the rise of domestically produced bias tees is injecting new variables into global ultra‑high‑speed optical communications.
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