Breaking the Bottleneck in High-Frequency RF Technology: The Path to Domestic Substitution for the AMEC Puyi BT110A Bias‑Tee
2026-03-10
I. Introduction: Core RF Pain Points in the Millimeter-Wave Era
In test and integration applications involving 1.6T/800G optical‑module VCSEL modulation chips, lasers, SerDes high‑speed data interfaces, ultra‑wideband power‑amplifier chips, and active antennas, a matchbox‑sized component—the Bias‑Tee (DC bias network)—is increasingly becoming a critical factor that determines system performance. As communication bands rapidly shift toward the millimeter‑wave range (30 GHz to 300 GHz), conventional Bias‑Tees are confronted with three major, insurmountable challenges:
(1) High-frequency loss: In frequency bands above 40 GHz, signal attenuation increases exponentially.
(2) Power bottleneck: With the widespread adoption of GaN power amplifiers, the required bias current has surged from the 100 mA range to 500 mA or higher.
(3) Market Monopoly: For a long time, the high‑frequency bias‑tee market has been dominated by companies such as Germany’s SHF and the U.S. firms Marki and HL, with unit prices exceeding US$4,000 and lead times stretching up to six months.
Meanwhile, the BT110A launched by Aumiwalker not only pushes the frequency ceiling to 110 GHz but also achieves domestic substitution through “military‑grade reliability at civilian‑grade costs,” becoming a benchmark product that breaks the bottleneck in high‑frequency RF technology.
II. Technological Breakthrough: How the BT110A Overcomes the Limits of Millimeter Waves
1. Materials and Process Innovation
1). Capacitor Revolution: Compared with conventional capacitors, the ceramic capacitors used in the BT110A offer advantages such as high voltage ratings, high self-resonant frequencies, compact dimensions, and exceptional reliability, making them ideally suited to meet the impedance‑matching and integration requirements of high‑frequency circuits.
2). Inductor miniaturization: Through innovative inductor designs, advanced manufacturing processes, and material breakthroughs, we have overcome the challenge of achieving ultra‑wideband performance with high Q factors. The device measures less than 0.5 mm × 0.5 mm while supporting a current rating of ≥400 mA (compared to the industry average of 200 mA).
2. Comparison of Measured High-Frequency Performance Data
Data sources: Zhongwei Puye Laboratory, SHF/HL official website
3. Environmental Reliability Design
1). Thermal Management Solution: Employing a high‑thermal‑conductivity structure and specialized heat‑dissipation processes, the device achieves a temperature rise lower than that of competing products at 110 GHz under full power (2 W), and has passed a 168‑hour continuous full‑load test—exceeding the international standard of 72 hours.
2). Vibration and High/Low Temperature Testing: Simulating optical communication test conditions, under random vibration at 20–2000 Hz and extreme temperatures ranging from −40°C to 85°C, performance variation remains below 3%.
III. Market Positioning: The Core Battleground for the BT110A
1. High-speed optical communication scenarios: Breaking the monopoly on “communication components”
1). Scenario requirements: In high-speed data test scenarios with throughput ≥112 Gbps, the signal’s highest frequency must be covered (e.g., for 100 Gbps optical modules, ≥50 GHz); attention should be paid to low insertion loss, VSWR, and crosstalk; and impedance matching to 50 Ω is required.
2). Measured data: Across the entire frequency range of the BT110A, the maximum insertion loss is less than 2 dB, the typical VSWR is 1.35, and the overall group delay fluctuates within the 40–60 ps range, with no obvious trend of monotonic increase or decrease with frequency.
Note: Measured standing wave ratio plot and measured group delay plot
2. Amplifier Scenario: Stable Operation + Efficient Signal Transmission
1). Performance Challenges: While ensuring no interference with the broadband transmission of RF signals, provide a clean DC bias to the wideband amplifier, minimize RF signal reflections, offer optional sense current/voltage monitoring ports, suppress power‑amplifier oscillation, and address the core requirement of integrating power supply and signal paths on a common link.
IV. The Logic of Domestic Substitution: From From “usable” to “easy to use” A leap forward
1. Cost Advantage: Disrupting the Foreign‑Owned Pricing Structure
Note: Actual prices may fluctuate with market conditions; the 2025 market quotations provided here are for reference only.
2. Supply Chain Security: Fully Autonomous and Controllable Production Line
From ceramic substrate lithography to inductor microfabrication, the entire supply chain is 100% domestically sourced, thereby mitigating risks associated with U.S. EAR export controls.
A technological breakthrough from catching up to taking the lead
According to data from Yole Group, the global high-frequency bias‑tee market was valued at approximately US$120 million in 2023 and is projected to reach US$450 million by 2028, with a compound annual growth rate (CAGR) of 30%. Meanwhile, Chinese manufacturers’ market share is expected to rise from 15% to 40%.
The breakthrough of Aumiwalker’s BT110A not only matches the performance metrics of international industry leaders but also signifies that Chinese RF component manufacturers have mastered the integrated core technological capabilities of “high frequency, high power, and high reliability.” We are also keeping pace with the market’s demand for 448 Gbps high-speed interconnects and continuing to advance toward 220 GHz bias‑tees.
On the cusp of a trillion-dollar market boom in millimeter-wave communications, satellite internet, autonomous driving, and more, the rise of domestically produced Bias-Tees is introducing a new dynamic into the global ultra-high-speed optical communications sector.
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