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    Power amplifier

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    Specifications and Parameters Detailed description

    Product model

    Operating frequency (GHz)

    Typical VSWR (:1)

    Small-signal gain (dB)

    RF input power (dBm)

    Saturated output power (dBm)

    P-1(dBm)

    DC voltage (V)

    Interface Type

    Collect

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    3D model

    ZPA12-31

    60~90

    1.5

    ≥33

    ≤13

    ≥30.5

    27 Type.

    220 Typ.

    1.0/f

    隐藏域元素占位

    MPA12-31

    60~90

    1.5

    20 types.

    ≤15

    31

    29

    12

    WR12,UG-387/U-M

    隐藏域元素占位

    MPA12-29

    60~90

    1.5

    20 types.

    ≤15

    29

    27

    12

    WR12,UG-387/U-M

    隐藏域元素占位

    MPA12-20

    60~90

    1.5

    30 types.

    ≤13

    18

    17

    5

    WR12,UG-387/U-M

    隐藏域元素占位

    MPA12-2120

    60~90

    2

    16 Typ.

    ≤18

    20

    18

    5

    WR12,UG-387/U-M

    隐藏域元素占位

    ZPA10-28

    75~110

    2

    ≥30

    ≤15

    ≥28

    25 Type.

    ≤24

    1.0/f

    隐藏域元素占位

    MPA10-28

    75~110

    2

    20 types.

    ≤15

    26

    24

    12

    WR10,UG-387/U-M

    隐藏域元素占位

    MPA10-29

    75~110

    2

    23 Typ.

    ≤15

    29

    27

    12

    WR10,UG-387/U-M

    隐藏域元素占位

    ZPA08-21

    90~140

    2

    ≥28

    ≤15

    21 Type.

    —

    24 Typ.

    WR8,UG-387/U-M

    隐藏域元素占位

    MPA08-15

    90~140

    2

    14 Typ.

    ≤14

    12 Typ.

    10

    3 Typ.

    WR8,UG-387/U-M

    隐藏域元素占位

    MPA08-21

    90~140

    2

    15 Typ.

    ≤18

    21 Type.

    19

    12 Typ.

    WR8,UG-387/U-M

    隐藏域元素占位

    MPA06-2219

    110~170

    2.2

    20 types.

    ≤16

    19 Typ.

    —

    12 Typ.

    WR6,UG-387/U-M

    隐藏域元素占位

    < 1 >

    Power amplifier

    Waveguide power amplifiers employ a standard waveguide transmission‑cavity architecture, leveraging high‑gain amplifier chips and carefully designed matching networks to deliver high‑efficiency, high‑power amplification of weak microwave and RF input signals, thereby effectively increasing system transmit power and signal propagation range. Compared with conventional coaxial and microstrip amplifiers, waveguide structures offer extremely low high‑frequency loss, exceptionally high power handling capability, and superior electromagnetic shielding performance. They address key industry challenges—such as poor amplification efficiency at high frequencies, severe thermal issues, power limitations, and significant electromagnetic interference—making them the core active RF amplification components for high‑power signal generation in radar transmitters, microwave communication systems, and millimeter‑wave sensing platforms.

    Product Features

    • High-frequency gain is high, and output power is large.

    • Low transmission loss and high amplification efficiency.

    • Good linearity, with minimal signal distortion.

    • Strong anti-interference capability and excellent stability.

    • Excellent heat dissipation and strong load-bearing capacity.

     

    Application areas
    • Radar detection system • Satellite and Microwave Communications • RF test and measurement • Electronic Warfare System

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    3D models are currently not available for direct download. Please leave a message with your requirements, and we will contact you as soon as possible.

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