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    Low-noise amplifier

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    Specifications and Parameters Detailed description

    Product model

    Operating frequency (GHz)

    small-signal gain (dB)

    NF (dB)

    VSWR (:1)

    gain flatness (dB)

    P-1(dBm)

    DC voltage/current (V)

    Interface Type

    Collect

    Download

    3D model

    M1715A

    1.4 GHz ~ 18 GHz

    ≥30

    ≤4.5 dB typical @ 1.4–4 GHz
    ≤3.5 dB typical @ 4–16 GHz
    ≤4.5 dB typical @ 16–18 GHz

    ≤3.0

    ≤2

    ≥20

    12V/500mA

    2.4/f

    隐藏域元素占位

    M37002A

    100 kHz~20 GHz

    ≥35

    2.5

    ≤2.0

    ≤3

    ≥15

    ≤15

    2.92(K)/f

    隐藏域元素占位

    M18006A

    0.5 GHz~50 GHz

    ≥23.4

    ≤4.2 dB typical @ 0.5–25 GHz
    ≤4.9 dB typical @ 25–40 GHz
    ≤6.5 dB typical @ 40–50 GHz

    IN VSWR≤2.1
    OUT VSWR≤3.4

    ≤6dB@0.5GHz~15GHz
    2 dB typ. @ 15 GHz ~ 50 GHz

    ≥11.2

    8V/275mA

    2.4/f

    隐藏域元素占位

    CLNA0140-1518

    10 MHz–40 GHz

    ≥28

    ≤7.0

    ≤2.5

    ≤1.5

    22

    12V/280mA

    2.92/f

    隐藏域元素占位

    CLNA0167-1514

    10 MHz–67 GHz

    20

    5

    ≤2.0

    4

    11

    6V/150mA

    1.85/f

    隐藏域元素占位

    CLNA0167-1212

    10 MHz–67 GHz

    12

    5

    ≤2.0

    4

    11

    6V/80mA

    1.85/f

    隐藏域元素占位

    < 1 >

    Low-noise amplifier

    Low-noise amplifiers are implemented as module-level integrated circuits based on semiconductor chips such as GaAs and InP, with a frequency range that can extend up to 110 GHz. They deliver gain exceeding 60 dB and exhibit an exceptionally low noise figure, meeting the demanding requirements of applications in electronic warfare, radar, electronic countermeasures, optical systems, and instrumentation and test‑and‑measurement fields.

    Product Features

    • Low noise figure, low VSWR

    • Broadband, miniaturization: 10 MHz–110 GHz

    • High gain, low gain flatness

     

    Application areas
    • Whole-device OTA testing   • Antenna Testing • Radar system • Wireless communication • Satellite communication

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